Optimization of Small-Signal Model of GaN HEMT by Using Evolutionary Algorithms

被引：39

作者：

Majumder, Arijit ^{[1
]}

Chatterjee, Soumyo ^{[2
]}

Chatterjee, Sayan ^{[3
]}

Chaudhari, Sheli Sinha ^{[3
]}

Poddar, Dipak Ranjan ^{[3
]}

机构：

[1] Govt India, Soc Appl Microwave Elect Engn & Res, Dept Elect & IT, MCIT, Kolkata 700091, India

[2] Heritage Inst Technol, Dept ECE, Kolkata 700107, India

[3] Jadavpur Univ, Dept ETCE, Kolkata 700032, India

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 04期

关键词：

Evolutionary algorithms; GaN HEMT; optimization; PARAMETER-EXTRACTION; DIFFERENTIAL EVOLUTION;

D O I：

10.1109/LMWC.2017.2678437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new evolutionary algorithm-based method for the optimization of intrinsic elements of small-signal model (SSM) of GaN HEMT devices is presented. The method uses a unique search space exploration strategy for evolutionary algorithms to obtain an optimized compact SSM from the extracted parameter and measured S-parameters. The validity of the method is verified by comparing the measured S-parameter data of a 2x0.1x50 mu m(2) GaN/Si HEMT and a 4x0.1x75 mu m(2) GaN/SiC HEMT in the frequency range of 1 to 30 GHz. The modeled data and measured data are in good agreement.

引用

页码：362 / 364

页数：3

共 13 条

[1] Transistor Modeling
Alt, Andreas R.
Marti, Diego
Bolognesi, C. R.
[J]. IEEE MICROWAVE MAGAZINE, 2013, 14 (04) : 83 - 101
[2] BROAD-BAND DETERMINATION OF THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
BERROTH, M
BOSCH, R
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (07) : 891 - 895
[3] An improved small-signal parameter-extraction algorithm for GaNHEMT devices
Brady, Ronan G.
Oxley, Christopher H.
Brazil, Thomas J.
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (07) : 1535 - 1544
[4] Accurate multibias equivalent-circuit extraction for GaN HEMTs
Crupi, Giovanni
Xiao, Dongping
Schreurs, Dominique M. M. -P.
Limiti, Ernesto
Caddemi, Alina
De Raedt, Walter
Germain, Marianne
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (10) : 3616 - 3622
[5] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
DAMBRINE, G
CAPPY, A
HELIODORE, F
PLAYEZ, E
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) : 1151 - 1159
[6] Kennedy J., 1995, 1995 IEEE International Conference on Neural Networks Proceedings (Cat. No.95CH35828), P1942, DOI 10.1109/ICNN.1995.488968
[7] An effective parameter extraction method based on memetic differential evolution algorithm
Liu, Bo
Lu, Jing
Wang, Yan
Tang, Yang
[J]. MICROELECTRONICS JOURNAL, 2008, 39 (12) : 1761 - 1769
[8] Neural approach for temperature-dependent modeling of GaN HEMTs
Marinkovic, Zlatica
Crupi, Giovanni
Caddemi, Alina
Avolio, Gustavo
Raffo, Antonio
Markovic, Vera
Vannini, Giorgio
Schreurs, Dominique M. M. -P.
[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2015, 28 (04) : 359 - 370
[9] Small-signal modeling for microwave FET linear circuits based on a genetic algorithm
Menozzi, R
Piazzi, A
Contini, F
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1996, 43 (10): : 839 - 847
[10] Accurate small-signal modeling of HFET's for millimeter-wave applications
Rorsman, N
Garcia, M
Karlsson, C
Zirath, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (03) : 432 - 437

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