Photoelectrochemical applications of electrochemical deposition of Ni2+-doped FeS2 thin films

被引:8
|
作者
Prabukanthan, P. [1 ]
Sreedhar, M. [1 ]
Thamaraiselvi, S. [1 ]
Harichandran, G. [2 ]
Seenuvasakumaran, P. [3 ]
Hanafiah, Marlia M. [4 ,5 ]
Fernandez, Carlos [6 ]
机构
[1] Muthurangam Govt Arts Coll, Dept Chem, Mat Chem Lab, Vellore 632002, Tamil Nadu, India
[2] Univ Madras, Dept Polymer Sci, Guindy Campus, Chennai 600025, Tamil Nadu, India
[3] Muthurangam Govt Arts Coll, Dept Phys, Vellore 632002, Tamil Nadu, India
[4] Univ Kebangsaan Malaysia, Fac Sci & Technol, Dept Earth Sci & Environm, Bangi 43600, Selangor, Malaysia
[5] Univ Kebangsaan Malaysia, Inst Climate Change, Ctr Trop Climate Change Syst, Bangi 43600, Selangor, Malaysia
[6] Robert Gordon Univ, Dept Chem, Aberdeen AB10 7GJ, Scotland
关键词
33;
D O I
10.1007/s10854-021-05350-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Different concentration (1-5 mol%) of Ni2+-doped FeS2 thin films were deposited by facile ECD technique. XRD pattern Ni2+ ion-doped FeS2 thin films were cubic structure with the high intensity plane (2 0 0). HRSEM images show that the undoped with 1-2 mol% Ni2+-doped FeS2 thin films were spherical-like morphology with aggregated grains. 3 mol% Ni2+-doped FeS2 thin film was aggregated with smaller size grains. Electrochemical impedance analysis reveals that the minimum charge transfer resistance (69 ohm) is obtained for 3 mol% Ni2+ ion-doped FeS2 thin films with exceptional conductivity character compared to other samples. Photoelectrochemical test indicates that 3 mol% Ni2+ ion-doped FeS2 thin film generates enhanced photocurrent response and faster immigration of photoinduced charge carriers compared to the other samples. It has been observed from CV analysis; the optimized 3 mol% Ni2+-doped FeS2 thin film delivers superior electrocatalytic performance of triiodide reduction.
引用
收藏
页码:6331 / 6343
页数:13
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