Novel μtrench Phase-Change Memory cell for embedded and stand-alone non-volatile memory applications

被引：0

作者：

Pellizzer, F ^{[1
]}

Pirovano, A ^{[1
]}

Ottogalli, F ^{[1
]}

Magistretti, M ^{[1
]}

Scaravaggi, M ^{[1
]}

Zuliani, P ^{[1
]}

Tosi, M ^{[1
]}

Benvenuti, A ^{[1
]}

Besana, P ^{[1
]}

Cadeo, S ^{[1
]}

Marangon, T ^{[1
]}

Morandi, R ^{[1
]}

Piva, R ^{[1
]}

Spandre, A ^{[1
]}

Zonca, R ^{[1
]}

Modelli, A ^{[1
]}

Varesi, E ^{[1
]}

Lowrey, T ^{[1
]}

Lacaita, A ^{[1
]}

Casagrande, G ^{[1
]}

Cappelletti, P ^{[1
]}

Bez, R ^{[1
]}

机构：

[1] STMicroelect, Cent R&D, I-20041 Milan, Italy

来源：

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new mutrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 muA, endurance of 10(11) programming cycles and data retention capabilities for 10 years at 100degreesC have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.

引用

页码：18 / 19

页数：2

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