An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

被引：4

作者：

Tang, Yin ^{[1
]}

Cai, Qing ^{[1
]}

Yang, Lian-Hong ^{[2
]}

Dong, Ke-Xiu ^{[3
]}

Chen, Dun-Jun ^{[1
]}

Lu, Hai ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Changji Coll, Dept Phys, Changji 831100, Peoples R China

[3] Chuzhou Univ, Sch Mech & Elect Engn, Chuzhou 239000, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 03期

基金：

中国国家自然科学基金;

关键词：

AlGaN; deep ultraviolet; photoelectric detector; distributed Bragg reflector;

D O I：

10.1088/1674-1056/26/3/038503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.

引用

页数：4

共 21 条

[1] High quantum efficiency back-illuminated GaN avalanche photodiodes
Bayram, C.
Pau, J. L.
McClintock, R.
Razeghi, M.
Ulmer, M. P.
Silversmith, D.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (21)
[2] Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook
Bellotti, Enrico
Bertazzi, Francesco
Shishehchi, Sara
Matsubara, Masahiko
Goano, Michele
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3204 - 3215
[3] Optical constants of epitaxial AlGaN films and their temperature dependence
Brunner, D
Angerer, H
Bustarret, E
Freudenberg, F
Hopler, R
Dimitrov, R
Ambacher, O
Stutzmann, M
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 5090 - 5096
[4] Bulmer J, 2016, IEEE PHOTONIC TECH L, V28, P1
[5] GaN avalanche photodiodes
Carrano, JC
Lambert, DJH
Eiting, CJ
Collins, CJ
Li, T
Wang, S
Yang, B
Beck, AL
Dupuis, RD
Campbell, JC
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (07) : 924 - 926
[6] Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes
Dong, Ke Xiu
Chen, Dun Jun
Lu, Hai
Liu, Bin
Han, Ping
Zhang, Rong
Zheng, You Dou
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (15) : 1510 - 1513
[7] Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
Huang, Y.
Chen, D. J.
Lu, H.
Dong, K. X.
Zhang, R.
Zheng, Y. D.
Li, L.
Li, Z. H.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (25)
[8] AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Multiplication Gain Using Back-Illuminated Structure
Huang, Zeqiang
Li, Jianfei
Zhang, Wenle
Jiang, Hao
[J]. APPLIED PHYSICS EXPRESS, 2013, 6 (05)
[9] Structural characterization of AlGaN/AlN Bragg reflector grown by metalorganic chemical vapor deposition
Ji, X. L.
Jiang, R. L.
Liu, B.
Xie, Z. L.
Zhou, J. J.
Li, L.
Han, P.
Zhang, R.
Zheng, Y. D.
Zheng, J. G.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (07): : 1572 - 1574
[10] Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates
Kim, Jeomoh
Ji, Mi-Hee
Detchprohm, Theeradetch
Dupuis, Russell D.
Ryou, Jae-Hyun
Sood, Ashok K.
Dhar, Nibir D.
Lewis, Jay
[J]. APPLIED PHYSICS EXPRESS, 2015, 8 (12)

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