Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules

被引：133

作者：

Choi, Ui-Min ^{[1
]}

Blaabjerg, Frede ^{[1
]}

Jorgensen, Soren ^{[2
]}

Munk-Nielsen, Stig ^{[1
]}

Rannestad, Bjorn ^{[3
]}

机构：

[1] Aalborg Univ, Dept Energy Technol, DK-9220 Aalborg, Denmark

[2] Grundfos Holding A S, DK-8850 Bjerringbro, Denmark

[3] KK Wind Solut A S, DK-7430 Ikast, Denmark

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2017年 / 32卷 / 10期

关键词：

Condition monitoring; insulated-gate bipolar transistor (IGBT); IGBT module; power converter; reliability; wear-out failure; BOND WIRES; FAILURE;

D O I：

10.1109/TPEL.2016.2633578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of themost reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state collector-emitter voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

引用

页码：7990 / 7997

页数：8

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