Organic Mask Removal Assessment For 32nm Fully Depleted SOI Technology With TiN-Metal Gate On HfO2

被引：0

作者：

Lachal, L. ^{[1
]}

Chiaroni, J. ^{[1
]}

Lajoinie, E. ^{[2
]}

Louveau, O. ^{[2
]}

Ritton, F. ^{[1
]}

Lavios, P. ^{[1
]}

Finet, J. M. ^{[1
]}

Brianceau, P. ^{[1
]}

Arnoux, A. ^{[1
]}

Sauvagnargues, E. ^{[1
]}

Billoux, O. ^{[1
]}

Medico, G. ^{[2
]}

Tallaron, C. ^{[1
]}

Humbert, F. ^{[1
]}

Rochat, N. ^{[1
]}

Martinez, E. ^{[1
]}

机构：

[1] Minatec CEA Leti, 17 Rue Martyrs, F-38054 Grenoble, France

[2] STMicroelect, F-38926 Crolles, France

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981617

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To pursue the device capability improvement, new materials have to be introduced in the gate stack. TiN metal gate on HfO2 is one of the solutions to replace existing gate. Thus, manufacturing processes, such as resist stripping, have to be adapted to these new materials as current processes can not be compatible. HfO2 compatibility was first studied by ellipsometry and ATR measurements, showing that Downstream type plasma (DS) with He-H-2 or H2-N2 gas mix for dry processes, and Hydrozone (TM) (HZ) for wet processes were fully compatible. Then TiN compatibility was investigated by WDXRF and XPS. Results indicate that the same processes as for HfO2 are compatible with TiN. Finally, effectiveness study proved that DS He-H-2 or H-2-N-2 plasmas were similar to O-2 plasma. To fully remove the polymers, HZ processes or derivatives have to be performed after plasmas.

引用

页码：355 / +

页数：2

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