Hot Carrier Effects in Trench-Based Integrated Power Transistors

被引：4

作者：

Moens, P. ^{[1
]}

Roig, J. ^{[1
]}

Desoete, B. ^{[1
]}

Bauwens, F. ^{[1
]}

Tack, M. ^{[1
]}

机构：

[1] ON Semicond Belgium, Power Technol Ctr, Corp R&D, Oudenaarde, Belgium

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

hot carrier; trench; power; MOS; HIGH-VOLTAGE; DEVICES; RESISTANCE; MOSFET;

D O I：

10.1109/IRPS.2009.5173289

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper reports for the first time on anomalous hot carrier effects observed in vertically integrated trench-based (TB-MOS) power transistors. The avalanche current reaches a maximum at intermediate drain voltage, and decreases for increasing drain voltage. The hot carrier lifetime of the transistors yields a minimum at intermediate drain voltage, and not at the maximum drain voltage. Charge pumping experiments enable to locate the degradation in the TB-MOS. A degradation model is proposed.

引用

页码：416 / 420

页数：5

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