Core structures of the a-edge dislocation in InN

被引:17
作者
Lei, H. P.
Ruterana, P.
Nouet, G.
Jiang, X. Y.
Chen, J.
机构
[1] ENSICAEN, UMR 6176, CNRS, SIFCOM, F-14050 Caen, France
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] Inst Univ Technol Alencon, Lab Rech Proprietes Mat Nouveaux, F-61250 Damigny, France
基金
欧盟地平线“2020”;
关键词
D O I
10.1063/1.2712799
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stillinger-Weber potential parameters were optimized for InN by fitting to the bulk material properties and point defect energy in order to calculate the core structure of the a-edge dislocation. The initial displacement field is imposed in the perfect crystal according to isotropic linear elasticity theory, and then the system is relaxed to the minimum energy. The different origins of the displacement field generate three cores with four, eight or five/seven atoms. The calculated energies indicate that the four-atom core structure is the most stable for InN. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 24 条
[1]   An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN [J].
Aïchoune, N ;
Potin, V ;
Ruterana, P ;
Hairie, A ;
Nouet, G ;
Paumier, E .
COMPUTATIONAL MATERIALS SCIENCE, 2000, 17 (2-4) :380-383
[2]   Atomic structure of dislocation cores in GaN -: art. no. 205323 [J].
Béré, A ;
Serra, A .
PHYSICAL REVIEW B, 2002, 65 (20) :1-10
[3]   Indium nitride (InN): A review on growth, characterization, and properties [J].
Bhuiyan, AG ;
Hashimoto, A ;
Yamamoto, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808
[4]   Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN [J].
Chen, J ;
Ruterana, P ;
Nouet, G .
PHYSICAL REVIEW B, 2003, 67 (20)
[5]   Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].
Chichibu, Shigefusa F. ;
Uedono, Akira ;
Onuma, Takeyoshi ;
Haskell, Benjamin A. ;
Chakraborty, Arpan ;
Koyama, Takahiro ;
Fini, Paul T. ;
Keller, Stacia ;
Denbaars, Steven P. ;
Speck, James S. ;
Mishra, Umesh K. ;
Nakamura, Shuji ;
Yamaguchi, Shigeo ;
Kamiyama, Satoshi ;
Amano, Hiroshi ;
Akasaki, Isamu ;
Han, Jung ;
Sota, Takayuki .
NATURE MATERIALS, 2006, 5 (10) :810-816
[6]   Classical simulations of the properties of group-III nitrides [J].
Chisholm, JA ;
Lewis, DW ;
Bristowe, PD .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (22) :L235-L239
[7]  
FORTZ BE, 1999, J APPL PHYS, V85, P7727
[8]  
HIRTH JP, 1982, THEORY DISLOCATIONS, P90
[9]   III-nitrides: Growth, characterization, and properties [J].
Jain, SC ;
Willander, M ;
Narayan, J ;
Van Overstraeten, R .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :965-1006
[10]   Effective electron mass and phonon modes in n-type hexagonal InN -: art. no. 115206 [J].
Kasic, A ;
Schubert, M ;
Saito, Y ;
Nanishi, Y ;
Wagner, G .
PHYSICAL REVIEW B, 2002, 65 (11) :1152061-1152067