Threshold-voltage recovery of a-S:H digital circuits

被引：9

作者：

Venugopal, Sameer M. ^{[1
]}

Allee, David B. ^{[1
]}

Li, Zi ^{[1
]}

Clark, Lawrence T. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Ira A Fulton Sch Engn, Tempe, AZ 85287 USA

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2006年 / 14卷 / 10-12期

关键词：

amorphous silicon; thin-film transistor circuit aging; threshold-voltage shift; THIN-FILM TRANSISTORS; TFTS;

D O I：

10.1889/1.2393030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.

引用

页码：1053 / 1057

页数：5

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