Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

被引：15
作者：
Hoffmann, F. [1 ]
Woltersdorf, G. [1 ]
Wegscheider, W. [1 ]
Einwanger, A. [1 ]
Weiss, D. [1 ]
Back, C. H. [1 ]
机构：
[1] Univ Regensburg, Dept Phys, D-93040 Regensburg, Germany
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 05期
关键词：
coercive force; ferromagnetic resonance; gallium arsenide; magnetic anisotropy; manganese compounds; nanostructured materials; semimagnetic semiconductors; FERROMAGNETIC-RESONANCE; GA1-XMNXAS;
D O I：
10.1103/PhysRevB.80.054417
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.
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页数：5
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