Crystallization kinetics of Si20Te80-xBix (0 ≤ x ≤ 3) chalcogenide glasses

被引:19
作者
Fernandes, Brian Jeevan [1 ]
Ramesh, K. [2 ]
Udayashankar, N. K. [1 ]
机构
[1] Natl Inst Technol Karnataka, Dept Phys, PO Srinivas Nagar, Mangaluru 575025, India
[2] Indian Inst Sci, Dept Phys, CV Raman Ave, Bengaluru 560012, India
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2019年 / 246卷
关键词
Differential scanning calorimetry; Activation energy; Thermal stability; Crystallization; ELECTRICAL-SWITCHING BEHAVIOR; GERMANIUM TELLURIDE GLASSES; PHASE-CHANGE MATERIALS; THERMAL-STABILITY; GE-TE; STRUCTURAL RELAXATION; TRANSITION TEMPERATURE; THRESHOLDS; PARAMETERS; FRAGILITY;
D O I
10.1016/j.mseb.2019.05.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this report, we investigate the crystallization kinetics of Si20Te80-xBi(0 <= x <= 3) chalcogenide glassy systems using differential scanning calorimetry (DSC) technique. Systematic studies are carried out in order to understand the variation of thermal parameters such as glass transition temperature (T-g), onset crystallization temperature (T-c) and peak crystallization temperature (T-p) as a function of composition. Activation energy for glass transition (E-g) and crystallization (E-c) has been calculated based on the relevant statistical methods. Furthermore, thermal parameters such as change in specific heat (Delta C-p), fragility index (F), thermal stability (Delta T) & (S), enthalpy (Delta H-c), entropy (Delta S) are deduced to interpret distinct material behaviour as a function of composition. Structural evaluation like thermal devitrification studies elucidate the restricted glass formability of the studied glass system. Conclusively, a relationship has been established between the obtained thermal parameters and electrical switching characteristics.
引用
收藏
页码:34 / 41
页数:8
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