Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

被引：23

作者：

Pateras, A. I. ^{[1
,2
]}

Allain, M. ^{[1
]}

Godard, P. ^{[1
]}

Largeau, L. ^{[3
]}

Patriarche, G. ^{[3
]}

Talneau, A. ^{[3
]}

Pantzas, K. ^{[3
]}

Burghammer, M. ^{[4
]}

Minkevich, A. A. ^{[2
]}

Chamard, V. ^{[1
]}

机构：

[1] Aix Marseille Univ, CNRS, Cent Marseille, Inst Fresnel,UMR 7249, F-13013 Marseille, France

[2] Karlsruhe Inst Technol, ANKA Inst Synchrotron Radiat, D-76344 Eggenstein Leopoldshafen, Germany

[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 20期

关键词：

RAY; DIFFRACTION; MICROSCOPY; NANOSCALE; PTYCHOGRAPHY; DEVICES;

D O I：

10.1103/PhysRevB.92.205305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the three-dimensional (3D) mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample preparation. Our approach takes advantage of 3D x-ray Bragg ptychography combined with an optimized inversion process. The excellent agreement with the sample nominal structure validates the reconstruction while the evidence of spatial fluctuations hardly observable by other means underlines the specificities of Bragg ptychography.

引用

页数：11

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