Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors

被引：16

作者：

Cheng, Chao-Ching ^{[1
]}

Chien, Chao-Hsin

Luo, Guang-Li

Yang, Chun-Hui

Kuo, Mei-Ling

Lin, Je-Hung

Chang, Chun-Yen

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Nano Device Lab, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.2430629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study the authors investigated the Ge outdiffusion characteristics of HfOxNy/Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high-k bulk dielectric in the form of GeOx, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process. (c) 2007 American Institute of Physics.

引用

页数：3

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