Fabrication and characterization of perovskite-based CH3NH3Pb1-xGexI3, CH3NH3Pb1-xTlxI3 and CH3NH3Pb1-xInxI3 photovoltaic devices

被引：22

作者：

Ohishi, Yuya ^{[1
]}

Oku, Takeo ^{[1
]}

Suzuki, Atsushi ^{[1
]}

机构：

[1] Univ Shiga Prefecture, Dept Mat Sci, 2500 Hassaka, Hikone, Shiga 5228533, Japan

来源：

IRAGO CONFERENCE 2015: 360 DEGREE OUTLOOK ON CRITICAL SCIENTIFIC AND TECHNOLOGICAL CHALLENGES FOR A SUSTAINABLE SOCIETY | 2016年 / 1709卷

关键词：

SOLAR-CELLS; HALIDE; OXIDES; LAYERS;

D O I：

10.1063/1.4941219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Perovskite-type CH3NH3PbI3-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.

引用

页数：8

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