Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

被引：6

作者：

Kanemitsu, Y ^{[1
]}

Tanaka, H

Kushida, T

Min, KS

Atwater, HA

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

GaAs nanocrystal; ion implantation; hydrogen passivation;

D O I：

10.1016/S0022-2313(99)00452-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO2 matrices formed by sequential ion implantation and thermal annealing. After thermal annealing at 900-1000 degrees C, broad PL due to GaAs nanocrystals appears in the red spectral region. The spectral shape of the red PL band depends on the hydrogen concentration in the sample. The hydrogen effect on GaAs nanocrystal luminescence will be discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：432 / 434

页数：3

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