Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

被引：6
|
作者：
Kanemitsu, Y [1 ]
Tanaka, H
Kushida, T
Min, KS
Atwater, HA
机构：
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷
关键词：
GaAs nanocrystal; ion implantation; hydrogen passivation;
D O I：
10.1016/S0022-2313(99)00452-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO2 matrices formed by sequential ion implantation and thermal annealing. After thermal annealing at 900-1000 degrees C, broad PL due to GaAs nanocrystals appears in the red spectral region. The spectral shape of the red PL band depends on the hydrogen concentration in the sample. The hydrogen effect on GaAs nanocrystal luminescence will be discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：432 / 434
页数：3
相关论文
共 50 条
  • [11] Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation
    Sahu, Gayatri
    Kumar, Rajesh
    Mahapatra, Durga Prasad
    SILICON, 2014, 6 (01) : 65 - 71
  • [12] Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation
    Gayatri Sahu
    Rajesh Kumar
    Durga Prasad Mahapatra
    Silicon, 2014, 6 : 65 - 71
  • [13] Luminescence from ZnO nanoparticles/SiO2 fabricated by ion implantation and thermal oxidation
    Amekura, H
    Sakuma, Y
    Kono, K
    Takeda, Y
    Kishimoto, N
    Buchal, C
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 760 - 763
  • [14] Formation and optical properties of intermetallic nanoclusters formed by sequential ion implantation
    Zuhr, RA
    Magruder, RH
    Anderson, TS
    SURFACE & COATINGS TECHNOLOGY, 1998, 104 : 401 - 408
  • [15] Optical properties of porous GaAs formed by low energy ion implantation
    Hernandez, Angelica
    Kudriavtsev, Yuriy
    Salinas-Fuentes, Cecilia
    Hernandez-Gutierrez, Carlos
    Asomoza, Rene
    VACUUM, 2020, 171
  • [16] Defect-band-free luminescence from ZnO nanoparticles fabricated by ion implantation and thermal oxidation
    Amekura, H.
    Sakuma, Y.
    Yoshitake, M.
    Takeda, Y.
    Kishimoto, N.
    Buchal, Ch.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 64 - 67
  • [17] Optical properties of dense Cu nanoparticle composites fabricated by negative ion implantation
    Takeda, Y
    Lu, J
    Plaksin, OA
    Amekura, H
    Kono, K
    Kishimoto, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 : 737 - 741
  • [18] Hydrogen-ion implantation in GaAs
    Gawlik, G
    Ratajczak, R
    Turos, A
    Jagielski, J
    Bedell, S
    Lanford, WL
    VACUUM, 2001, 63 (04) : 697 - 700
  • [19] CARBON ION-IMPLANTATION IN GAAS
    HARA, T
    TAKEDA, S
    MOCHIZUKI, A
    OIKAWA, H
    HIGASHISAKA, A
    KOHZU, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (8B): : L1020 - L1023
  • [20] Ion implantation fabricated integrated GaAs quantum well multi-wavelength light emitting chip
    Li, ZF
    Liu, XQ
    Chen, CM
    Lu, W
    Shen, XC
    Zhu, DZ
    Pan, HC
    Hu, J
    Li, MQ
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (03) : 181 - 184
12345