Tuning the Electron-Phonon Coupling in Multilayer Graphene with Magnetic Fields

被引:87
作者
Faugeras, C. [1 ]
Amado, M. [1 ,2 ]
Kossacki, P. [1 ,3 ]
Orlita, M. [1 ]
Sprinkle, M. [4 ]
Berger, C. [4 ,5 ]
de Heer, W. A. [4 ]
Potemski, M. [1 ]
机构
[1] CNRS, LNCMI, F-38042 Grenoble 9, France
[2] Univ Complutense, QNS GISC, Dept Fis Mat, E-28040 Madrid, Spain
[3] Univ Warsaw, Inst Expt Phys, Warsaw, Poland
[4] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[5] CNRS, Inst Neel, F-38042 Grenoble 9, France
关键词
D O I
10.1103/PhysRevLett.103.186803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magneto-Raman scattering study of the E-2g optical phonons in multilayer epitaxial graphene grown on a carbon face of SiC is presented. At 4.2 K in magnetic field up to 33 T, we observe a series of well-pronounced avoided crossings each time the optically active inter-Landau level transition is tuned in resonance with the E-2g phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.
引用
收藏
页数:4
相关论文
共 30 条
[1]   Magnetic oscillation of optical phonon in graphene [J].
Ando, Tsuneya .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2007, 76 (02)
[2]   Anomaly of optical phonon in monolayer graphene [J].
Ando, Tsuneya .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (12)
[3]   Kohn anomaly in MgB2 by inelastic X-ray scattering -: art. no. 197004 [J].
Baron, AQR ;
Uchiyama, H ;
Tanaka, Y ;
Tsutsui, S ;
Ishikawa, D ;
Lee, S ;
Heid, R ;
Bohnen, KP ;
Tajima, S ;
Ishikawa, T .
PHYSICAL REVIEW LETTERS, 2004, 92 (19) :197004-1
[4]   Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].
Berger, C ;
Song, ZM ;
Li, TB ;
Li, XB ;
Ogbazghi, AY ;
Feng, R ;
Dai, ZT ;
Marchenkov, AN ;
Conrad, EH ;
First, PN ;
de Heer, WA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916
[5]   Electron-phonon coupling and Raman spectroscopy in graphene [J].
Castro Neto, A. H. ;
Guinea, Francisco .
PHYSICAL REVIEW B, 2007, 75 (04)
[6]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[7]   Graphene bilayer with a twist: Electronic structure [J].
dos Santos, J. M. B. Lopes ;
Peres, N. M. R. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (25)
[8]   Few-layer graphene on SiC, pyrolitic graphite, and graphene:: A Raman scattering study [J].
Faugeras, C. ;
Nerriere, A. ;
Potemski, M. ;
Mahmood, A. ;
Dujardin, E. ;
Berger, C. ;
de Heer, W. A. .
APPLIED PHYSICS LETTERS, 2008, 92 (01)
[9]   Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[10]   Landau levels in bulk graphite by Raman spectroscopy [J].
Garcia-Flores, A. F. ;
Terashita, H. ;
Granado, E. ;
Kopelevich, Y. .
PHYSICAL REVIEW B, 2009, 79 (11)