RRAM-based 7T1R Nonvolatile SRAM with 2x Reduction in Store Energy and 94x Reduction in Restore Energy for Frequent-Off Instant-On Applications

被引:48
作者
Lee, Albert [1 ]
Chang, Meng-Fan [1 ]
Lin, Chien-Chen [1 ]
Chen, Chien-Fu [1 ,2 ]
Ho, Mon-Shu [3 ]
Kuo, Chia-Chen [4 ]
Tseng, Pei-Ling [4 ]
Sheu, Shyh-Shyuan [4 ]
Ku, Tzu-Kun [4 ]
机构
[1] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan
[2] NDL, Taipei, Taiwan
[3] Natl Chung Hsin Univ, Taipei, Taiwan
[4] ITRI, EOL, Taipei, Taiwan
来源
2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS) | 2015年
关键词
D O I
10.1109/VLSIC.2015.7231368
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This study proposes a 7T1R nonvolatile SRAM (nvSRAM) to 1) reduce store energy by using a single NVM device, 2) suppress DC-short current during restore operations through the use of a pulsed-overwrite (POW) scheme, and 3) achieves high restore yield by using a differentially supplied initialization (DSI) scheme. This initialization-and-overwrite (IOW) 7T1R nvSRAM improves breakeven-time (BET) by 6+x, compared to previous nvSRAMs. We fabricated a 16Kb IOW-7T1R nvSRAM using HfOx RRAM and a 90nm process. This represents the first ever silicon verified single-NVM nvSRAM macro. Measurements obtained in test-mode confirm that the proposed nvSRAM reduces store energy by 2x and restore energy by 94x, compared to 2R-based nvSRAMs.
引用
收藏
页数:2
相关论文
共 7 条
[1]  
Chiu P. F, 2010, IEEE VLSIC, P229
[2]  
Ohsawa T., 2013, IEEE JSSC, P1511
[3]  
Sheu SS, 2013, IEEE ASIAN SOLID STA, P245, DOI 10.1109/ASSCC.2013.6691028
[4]  
Shyh-Shyuan Sheu, 2011, 2011 IEEE International Solid-State Circuits Conference (ISSCC 2011), P200, DOI 10.1109/ISSCC.2011.5746281
[5]  
Wei W., 2014, IEEE T NANOTECHNOL, P905
[6]   Nonvolatile SRAM (NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices [J].
Yamamoto, Shuu'ichirou ;
Shuto, Yusuke ;
Sugahara, Satoshi .
PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2009, :531-+
[7]  
Zhao H, 2007, GLOB TELECOMM CONF, P4000