A New 1-D Chain of γ-Hg3S2Br2 Constructed from Hg4S4 Squares: Solid-state Synthesis, Structure and Optical Properties

被引：0
|
作者：
Diao Jian-Feng [1 ,2 ]
Xie Zhi-Xin [3 ]
Li Pei-Xin [2 ]
Guo Guo-Cong [2 ]
机构：
[1] Fujian Normal Univ, Coll Chem & Mat Sci, Fuzhou 350007, Peoples R China
[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
[3] Univ Toronto, Fac Arts & Sci, Dept Chem, Toronto, ON M5S 3H6, Canada
来源：
CHINESE JOURNAL OF STRUCTURAL CHEMISTRY | 2021年 / 40卷 / 02期
关键词：
crystal structure; metal chalcogenides; resistance; semiconductor; solid-state reaction; CRYSTAL-STRUCTURE; PHASE-EQUILIBRIA; SYSTEM; BR;
D O I：
10.14102/j.cnki.0254-5861.2011-2816
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
A new metal chalcogenide, gamma-Hg3S2Br2 (1), has been prepared by moderate-temperature solidstate reaction, and its crystal structure was determined by single -crystal X-ray diffraction analysis. Compound 1 crystallizes in space group Cmmm of orthorhombic system with a = 9.1923(18), b = 18.2262(5), c = 4.6251(7) angstrom, V = 774.9(3) angstrom(3) and Z = 4. In the structure, two Hg(1), two Hg(2) and four S(1) atoms form a near square Hg4S4, and such squares are linked by Hg(3) atoms nearly linearly coordinated to two S1 atoms of two parallel Hg4S4 squares to form one-dimensional infinite Hg6S4 chains along c direction. Optical absorption spectra reveal the presence of sharp optical gap of 2.80 eV for 1. IR spectrum, TGA and electric resistivity have been investigated.
引用
收藏
页码：264 / 269
页数：6
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