Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

被引:377
作者
Tschanz, JW [1 ]
Kao, JT
Narendra, SG
Nair, R
Antoniadis, DA
Chandrakasan, AP
De, V
机构
[1] Intel Corp, Intel Labs, Microproc Res, Hillsboro, OR 97124 USA
[2] MIT, Cambridge, MA 02139 USA
关键词
body bias; CMOS digital integrated circuits; forward bias; low-power circuits; microprocessors; parameter variations; substrate bias; within-die variation;
D O I
10.1109/JSSC.2002.803949
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150-nm CMOS testchip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.
引用
收藏
页码:1396 / 1402
页数:7
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