Finding the low-energy structures of Si[001] symmetric tilted grain boundaries with a genetic algorithm

被引:50
作者
Zhang, Jian [1 ]
Wang, Cai-Zhuang
Ho, Kai-Ming
机构
[1] US DOE, Ames Lab, Ames, IA 50011 USA
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 17期
关键词
crystal symmetry; dislocations; elemental semiconductors; silicon; surface structure; tight-binding calculations; tilt boundaries; SILICON; SEMICONDUCTORS; OPTIMIZATION; SEGREGATION; DIAMOND;
D O I
10.1103/PhysRevB.80.174102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We developed a global structure optimization method, genetic algorithm, for a fast and efficient prediction of grain-boundary structures. Using this method we predicted the most stable structures and a number of low-energy metastable structures for Si[001] symmetric tilted grain boundaries with various tilted angles. We show that most of the grain-boundary structures can be described by the structural unit model with the units being the dislocation cores and perfect-crystal fragments. The energies of the grain-boundary structures obtained from the genetic algorithm optimization are evaluated by tight-binding calculations using the environment-dependent Si tight-binding potential developed previously and found to be in very good agreement with the first-principles calculation results.
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页数:6
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