Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier

被引：39

作者：

Connelly, Michael J. ^{[1
]}

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Opt Commun Res Grp, Limerick, Ireland

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 01期

基金：

爱尔兰科学基金会;

关键词：

modeling; parameter extraction; semiconductor optical amplifier; tensile-strained bulk material;

D O I：

10.1109/JQE.2006.885205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model.

引用

页码：47 / 56

页数：10

共 15 条

[1] Agrawal G, 1986, LONG WAVELENGTH SEMI
[2] Chow WW., 1999, SEMICONDUCTOR LASER, DOI 10.1007/978-3-662-03880-2
[3] Chuang S. L., 1995, PHYS OPTOELECTRONIC
[4] Connelly M. J., 2004, Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices (IEEE Cat. No.04EX874), P38, DOI 10.1109/NUSOD.2004.1345137
[5] Connelly M.J., 2002, SEMICONDUCTOR OPTICA
[6] Wideband dynamic numerical model of a tapered buried ridge stripe semiconductor optical amplifier gate
Connelly, MJ
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2002, 149 (03): : 173 - 178
[7] Wideband semiconductor optical amplifier steady-state numerical model (vol 37, pg 439, 2001)
Connelly, MJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (08) : 1103 - 1103
[8] Wideband semiconductor optical amplifier steady-state numerical model
Connelly, MJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (03) : 439 - 447
[9] THEORY OF CARRIER HEATING THROUGH INJECTION PUMPING AND LASING IN SEMICONDUCTOR MICROCAVITY LASERS
JAHNKE, F
KOCH, SW
[J]. OPTICS LETTERS, 1993, 18 (17) : 1438 - 1440
[10] IMPROVED PERFORMANCE OF LONG-WAVELENGTH STRAINED BULK-LIKE SEMICONDUCTOR-LASERS
JONES, G
OREILLY, EP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) : 1344 - 1354

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