Submonolayer Quantum-Dot Lasers

被引：3

作者：

Lingnau, Benjamin ^{[1
]}

Luedge, Kathy ^{[1
,2
]}

Owschimikow, Nina ^{[3
]}

机构：

[1] Tech Univ Berlin, Inst Theoret Phys, Berlin, Germany

[2] Univ Auckland, Dept Phys, Auckland, New Zealand

[3] Tech Univ Berlin, Inst Opt & Atomare Phys, Berlin, Germany

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXV | 2017年 / 10098卷

关键词：

Quantum dots; semiconductor lasers; novel gain materials; DEPOSITION; GROWTH; MODE;

D O I：

10.1117/12.2252754

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Active media based on submonolayer (SML) quantum-dots are a novel gain material that potentially combines the high gain of semiconductor quantum-wells with the ultrafast gain recovery of Stranski-Krastanov quantumdots. By comparison of theory and experiment, we find an ultrafast gain recovery timescale well below one picosecond, along with a high optical gain. We investigate SML lasers theoretically and provide comparisons with conventional quantum-dot devices. We find a substantial increase in small-signal bandwidth and large-signal modulation capability. Our results show that semiconductor submonolayer laser and amplifier devices are promising candidates for high-speed optoelectronics as well as integrated photonics applications.

引用

页数：7

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