Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells

被引：74

作者：

Liu, Zhifa ^{[1
]}

Siekmann, Johanna ^{[1
]}

Klingebiel, Benjamin ^{[1
]}

Rau, Uwe ^{[1
]}

Kirchartz, Thomas ^{[1
,2
,3
]}

机构：

[1] Forschungszentrum Julich, IEK5 Photovolta, D-52425 Julich, Germany

[2] Univ Duisburg Essen, Fac Engn, Carl Benz Str 199, D-47057 Duisburg, Germany

[3] Univ Duisburg Essen, CENIDE, Carl Benz Str 199, D-47057 Duisburg, Germany

来源：

ADVANCED ENERGY MATERIALS | 2021年 / 11卷 / 16期

关键词：

fullerene blends; high open‐ circuit voltage; low nonradiative recombination; perovskites solar cells; wide bandgaps;

D O I：

10.1002/aenm.202003386

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nonradiative recombination processes are the biggest hindrance to approaching the radiative limit of the open-circuit voltage for wide bandgap perovskite solar cells. In addition to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer-absorber interfaces are crucial to minimize nonradiative recombination pathways. By tuning the lowest-unoccupied molecular-orbital of electron transport layers via the use of different fullerenes and fullerene blends, open-circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)(3) device are demonstrated. Further optimization of mobility in binary fullerenes electron transport layers can boost the power conversion efficiency as high as 18.9%. It is noted in particular that the V-oc fill factor product is >1.096 V, which is the highest value reported for halide perovskites with this bandgap.

引用

页数：13

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