Self-Diffusion in Amorphous Silicon

被引：28

作者：

Strauss, Florian ^{[1
]}

Doerrer, Lars ^{[1
]}

Geue, Thomas ^{[2
]}

Stahn, Jochen ^{[2
]}

Koutsioubas, Alexandros ^{[3
]}

Mattauch, Stefan ^{[3
]}

Schmidt, Harald ^{[1
]}

机构：

[1] Tech Univ Clausthal, Inst Met, AG Mikrokinet, D-38678 Clausthal Zellerfeld, Germany

[2] Paul Scherrer Inst, Lab Neutron Scattering & Imaging, CH-5232 Villigen, Switzerland

[3] Forschungszentrum Julich GmbH, JCNS, Outstn MLZ, D-85747 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 116卷 / 02期

关键词：

THIN-FILM TRANSISTORS; STRUCTURAL RELAXATION; SI/GE MULTILAYERS; ATOMIC DIFFUSION; POINT-DEFECTS; SOLAR-CELLS; INTERDIFFUSION; MECHANISMS; AMORPHIZATION; DISPLAYS;

D O I：

10.1103/PhysRevLett.116.025901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si-29/Si-nat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 degrees C with an activation energy of (4.4 +/- 0.3) eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 degrees C, which can be interpreted as the consequence of a high diffusion entropy.

引用

页数：6

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