Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

被引：25

作者：

Roy, S. ^{[1
]}

Portail, M. ^{[1
]}

Chassagne, T. ^{[2
]}

Chauveau, J. M. ^{[1
,3
]}

Vennegues, P. ^{[1
]}

Zielinski, M. ^{[2
]}

机构：

[1] CNRS CRHEA, F-06560 Valbonne, France

[2] Savoie Technolac, NOVASiC, F-73375 Le Bourget Du Lac, France

[3] Univ Nice Sophia Antipolis, Dept Phys, F-06102 Nice, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期

关键词：

elemental semiconductors; silicon; silicon compounds; stacking faults; transmission electron microscopy; twin boundaries; wide band gap semiconductors; GROWTH; PERFORMANCE; CRYSTAL; SILICON; REACTOR; WAFERS; FILMS; CVD; 3C;

D O I：

10.1063/1.3202783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, transmission electron microscopy is used to investigate the influence of the carbonization conditions on the formation of crystal defects in 3C-SiC layers deposited on (111) silicon. We focus on two kinds of defects; (1) the stacking faults and microtwins lying in the (11) planes, and (2) the double positioning domains. While the density of the stacking faults and microtwins is found independent on the carbonization conditions, the size of the double positioning domains is strongly influenced by the propane flow rate and can be related to the substrate sealing at the early stage of carbonization.

引用

页数：3

共 17 条

[1] INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON [J].