Origin of hexagonal-shaped etch pits formed in (0001) GaN films

被引：92

作者：

Hong, SK

Yao, T

Kim, BJ

Yoon, SY

Kim, TI

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Samsung Adv Inst Technol, Mat Sector, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.126884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the origin of hexagonal-shaped etch pits generally observed by conventional wet etching processes on (0001) GaN-based films based on the investigation with transmission electron microscopy on GaN films after being etched with molten KOH. The origin of hexagonal-shaped etch pits is identified as nanopipes through careful characterization of abnormal contrast of nanopipe (open-core screw dislocation), "lobe contrast" of end-on edge and screw (full-core) dislocations, visible and invisible conditions of edge and screw dislocations. Consideration of energetics of these defects also suggests preferential etch pit formation at nanopipes because of much higher energy. (C) 2000 American Institute of Physics. [S0003-6951(00)04827-0].

引用

页码：82 / 84

页数：3

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