Spin Dependent Recombination in CdTe/CdS Solar Cells

被引：0

作者：

Goodridge, S. I. ^{[1
]}

Lenahan, P. M. ^{[1
]}

Young, C. D. ^{[2
]}

Quevedo-Lopez, M. ^{[2
]}

Avila-Avendano, J. ^{[2
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

magnetic resonance; magnetoresistance; photovoltaic cells; p-n junctions; EFFICIENCY; RESONANCE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

引用

页码：1553 / 1556

页数：4

共 17 条

[1] ELECTRON-SPIN-RESONANCE ANALYSIS OF THE DEEP DONORS LEAD, TIN, AND GERMANIUM IN CDTE [J].