Thermostatic control for temperature compensation of a silicon pressure sensor

被引：13

作者：

De Bruyker, D ^{[1
]}

Puers, R ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept ESAT MICAS, B-3001 Louvain, Belgium

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 82卷 / 1-3期

关键词：

pressure sensors; temperature compensation; sensor interfacing;

D O I：

10.1016/S0924-4247(99)00321-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An alternative temperature compensation technique for a silicon pressure sensor is presented. By using on-chip heater and temperature sensing electrodes, a thermostatic control loop is implemented. The sensor is biased at a reference temperature, which is maintained with high accuracy over a specified range, hereby eliminating the dependence of the pressure sensor output on ambient temperature. No additional calibration procedures for temperature compensation or external temperature sensing elements are required. Modelling aspects as well as experimental results are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：120 / 127

页数：8