Enhancement-mode AlGaN/AlN/GaN high electron mobility transistor with low on-state resistance and high breakdown voltage

被引：91

作者：

Ohmaki, Yuji ^{[1
]}

Tanimoto, Masashi ^{[1
]}

Akamatsu, Shiro ^{[1
]}

Mukai, Takashi ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Anan, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 42-45期

关键词：

GaN; thin AlGaN; high electron mobility transistor (HEMT); normally-off; enhancement-mode; SiO2; passivation; side ohmic; on-state resistance; off-state breakdown voltage;

D O I：

10.1143/JJAP.45.L1168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low on-resistance and high-breakdown-voltage enhancement-mode (E-mode) AlGaN/AIN/GaN high electron mobility transistor (HEMT) was fabricated without the recessed-gate process. A thin AlGaN barrier layer (4.5 nm) was used for the normally-off operation. In order to decrease the on-state resistance, two different techniques are used. One is the side-ohmic contact, which has a low contact resistance, due to the direct contact with the two-dimensional electron gas (2DEG). The other is SiO2 passivation, which induces the sheet carriers and decreases the sheet resistance. As a result, an on-state resistance of 1.9 m Omega(.)cm(2) and an off-state breakdown voltage of 610V were achieved for the E-mode HEMT within a threshold voltage of approximately -0.1 V.

引用

页码：L1168 / L1170

页数：3

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