Etch characteristics of Pt using Cl2/Ar/O2 gas mixtures

被引:14
作者
Kwon, KH [1 ]
Kang, SY
Yeom, GY
Hong, NK
Lee, JH
机构
[1] Hanseo Univ, Dept Elect Engn, Chungnam 356820, Chungchongnam D, South Korea
[2] Elect & Telecommun Res Inst, Microelect Tech Lab, Yusong Gu, Taejon 305350, South Korea
[3] Sungkyunkwan Univ, Dept Mat Engn, Kyonggi Do 440339, South Korea
[4] Hanseo Univ, Dept Phys, Chungnam 356820, Chungchongnam D, South Korea
关键词
D O I
10.1149/1.1393438
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Inductively coupled plasma etching of platinum with Cl-2/O-2/Ar gas chemistries was examined. Plasma characteristics were investigated with increasing O-2 ratios using a Langmuir probe and a quadrupole mass spectrometer. The chemical reaction during the platinum etching was also examined from the chemical binding states of the etched surface by X-ray photoelectron spectroscopy. Additional characterization employed a four-point probe, thin-film thickness measuring system, and scanning electron microscopy. The relationship between plasma characteristics and etch results with various O-2-gas mixing ratios was also studied. It was confirmed that small additions of oxygen into the Cl-2/Ar gas mixtures lead to high selectivity and a good sidewall profile without a fence, also referred to as a bull-ear. (C) 2000 The Electrochemical Society. S0013-4651(99)09-040-0. All rights reserved.
引用
收藏
页码:1807 / 1809
页数:3
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