Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopper

被引：3

作者：

Kim, KW ^{[1
]}

Cho, KS ^{[1
]}

Ryu, JI ^{[1
]}

Yoo, KH ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 06期

关键词：

liquid crystal displays; SiOF; thin-film transistors;

D O I：

10.1109/55.843157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose fluorinated silicon oxide (SiOF) as the ion-stopper of bottom-gate amorphous silicon thin film transistors (a-Si:H TFT's). The low dielectric constant SiOF on both back-channel of the TFT and the crossover regions of gate/data lines can contribute to reducing the RC delay of the gate pulse signal in active-matrix liquid-crystal displays. Besides, an a-Si:H TFT with a SiOF stopper had an improved performance compared to a widely-employed silicon nitride (SiNx) stopper TFT because the fluorine incorporation reduces the interface state density between a-Si:H and SiOF.

引用

页码：301 / 303

页数：3

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