Selective sensing of triazine herbicides in imprinted membranes using ion-sensitive field-effect transistors and microgravimetric quartz crystal microbalance measurements

被引:50
|
作者
Pogorelova, SP [1 ]
Bourenko, T [1 ]
Kharitonov, AB [1 ]
Willner, I [1 ]
机构
[1] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel
关键词
D O I
10.1039/b204491a
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A series of triazine herbicides consisting of the chlorotriazine atranex (atrazine), (1), prozinex, (2), tyllanex, (3), simanex, (4) and the methylthiolated triazines ametrex, (5), prometrex, (6) and terbutex, (7), were imprinted in an acrylamide-methacrylate copolymer. The polymer was deposited on the gate surface of ion-sensitive field-effect transistors (ISFETs) and piezoelectric Au-quartz crystals. Selective sensing of the imprinted substrates was accomplished by the imprinted polymer membrane associated with the ISFETs and Au-quartz crystals. Binding of the substrates onto the imprinted polymer associated with the gate of the ISFET alters the electrical charge and potential of the gate interface, thus allowing the potentiometric transduction of the binding events. The association of the substrates with the imprinted membrane linked to the Au-quartz crystal results in the membrane swelling, thus enabling the microgravimetric quartz crystal microbalance assay of the substrate binding events. The specificity of the imprinted recognition sites is attributed to complementary H-bond and electrostatic interactions between the substrates and the acrylamide-methacrylic acid copolymer.
引用
收藏
页码:1484 / 1491
页数:8
相关论文
共 50 条
  • [1] Advance of ion-sensitive field-effect transistors
    Yi Qi Yi Biao Xue Bao, 3 (322-325):
  • [2] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH ULTRATHIN LANGMUIR-BLODGETT MEMBRANES
    SCHONING, MJ
    SAUKE, M
    STEFFEN, A
    MARSO, M
    KORDOS, P
    LUTH, H
    KAUFFMANN, F
    ERBACH, R
    HOFFMANN, B
    SENSORS AND ACTUATORS B-CHEMICAL, 1995, 27 (1-3) : 325 - 328
  • [3] Ion-sensitive field-effect transistors with ultrathin Langmuir-Blodgett membranes
    Schoening, M.J.
    Sauke, M.
    Steffen, A.
    Marso, M.
    Kordos, P.
    Lueth, H.
    Kauffmann, F.
    Erbach, R.
    Hoffmann, B.
    Sensors and Actuators, B: Chemical, 1995, B27 (1 -3 pt 2): : 325 - 328
  • [4] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
    AKIYAMA, T
    UJIHIRA, Y
    OKABE, Y
    SUGANO, T
    NIKI, E
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1936 - 1941
  • [5] Understanding the Electrolyte Background for Biochemical Sensing with Ion-Sensitive Field-Effect Transistors
    Tarasov, Alexey
    Wipf, Mathias
    Stoop, Ralph L.
    Bedner, Kristine
    Fu, Wangyang
    Guzenko, Vitaliy A.
    Knopfmacher, Oren
    Calame, Michel
    Schoenenberger, Christian
    ACS NANO, 2012, 6 (10) : 9291 - 9298
  • [6] ION-SENSITIVE FIELD-EFFECT TRANSISTORS AND RELATED DEVICES
    ZEMEL, JN
    ANALYTICAL CHEMISTRY, 1975, 47 (02) : A255 - &
  • [7] TIME EFFECTS OF ION-SENSITIVE FIELD-EFFECT TRANSISTORS
    KLEIN, M
    SENSORS AND ACTUATORS, 1989, 17 (1-2): : 203 - 208
  • [9] Ion-Sensitive Field-Effect Transistor for Biological Sensing
    Lee, Chang-Soo
    Kim, Sang Kyu
    Kim, Moonil
    SENSORS, 2009, 9 (09): : 7111 - 7131
  • [10] NEW MEMBRANE MATERIALS FOR POTASSIUM-SELECTIVE ION-SENSITIVE FIELD-EFFECT TRANSISTORS
    VANDERWAL, PD
    SKOWRONSKAPTASINSKA, M
    VANDENBERG, A
    BERGVELD, P
    SUDHOLTER, EJR
    REINHOUDT, DN
    ANALYTICA CHIMICA ACTA, 1990, 231 (01) : 41 - 52