Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts

被引:2
作者
Alet, Pierre-Jean [1 ,2 ]
Palacin, Serge [1 ]
Cabarrocas, Pere Roca I. [2 ]
机构
[1] CEA, IRAMIS, SPCSI, LCSI, F-91191 Gif Sur Yvette, France
[2] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
关键词
Thin films; Nano-structure; Copper; Gold; Silicon; Catalysis; Plasma-Enhanced Chemical Vapor Deposition; SILANE; SURFACES; NANOSTRUCTURES; ADSORPTION; CU(111); CELLS;
D O I
10.1016/j.tsf.2009.02.106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 degrees C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H-2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:6405 / 6408
页数:4
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