Thin Nanoporous Metal-Insulator-Metal Membranes

被引:4
作者
Aramesh, Morteza [1 ,2 ]
Djalalian-Assl, Amir [2 ]
Yajadda, Mir Massoud Aghili [3 ]
Prawer, Steven [2 ]
Ostrikov, Kostya [1 ,4 ]
机构
[1] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Inst Future Environm, Brisbane, Qld 4000, Australia
[2] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia
[3] CSIRO, Mfg Flagship, POB 218, Lindfield, NSW 2070, Australia
[4] CSIRO, Plasma Nanosci Labs, Lindfield, NSW 2070, Australia
关键词
nanoporous materials; plasma-enhanced chemical-vapor-deposition; silicon dioxide; dielectric breakdown; soft ionizing membrane (SIM); MASS-SPECTROMETRY; DIELECTRIC-BREAKDOWN; CONDUCTION; ARRAYS; TRANSPORT; EMITTER; NANOGAP;
D O I
10.1021/acsami.5b11182
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 X 10(7) V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 x 10(6) V/cm; sufficient for ionization of wide range of molecules. These metal-insulator-metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy.
引用
收藏
页码:4292 / 4297
页数:6
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