Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

被引：27

作者：

Tiwari, Shree Prakash ^{[1
]}

Zhang, Xiao-Hong ^{[1
]}

Potscavage, William J., Jr. ^{[1
]}

Kippelen, Bernard ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

基金：

美国国家科学基金会;

关键词：

atomic layer deposition; contact resistance; electron mobility; hafnium compounds; high-k dielectric thin films; organic field effect transistors; organic semiconductors; semiconductor-insulator boundaries;

D O I：

10.1063/1.3269579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition. Devices exhibit excellent n-channel performance with electron mobility values up to 0.14 cm(2)/V s, threshold voltages of similar to 0.3 V, current on/off ratios >10(5), and very low values of subthreshold slope (similar to 140 mV/decade).

引用

页数：3

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