Structure and microstructure of PbTiO3 thin films obtained from hybrid chemical method

被引:7
作者
Ignácio, C
Soares, AR
Yukimitu, K
Moraes, JCS
Malmonge, JA
Nunes, VB
Zanette, SI
Araújo, EB
机构
[1] UNESP, Dept Quim & Fis, Grp Vidros & Ceram, BR-15385000 Ilha Solteira, SP, Brazil
[2] CBPF, BR-22290180 Rio De Janeiro, Brazil
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2003年 / 346卷 / 1-2期
基金
巴西圣保罗研究基金会;
关键词
crystallization; ferroelectric; thin films;
D O I
10.1016/S0921-5093(02)00522-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
PbTiO3 thin films were deposited on Si(100) via hybrid chemical method and crystallized between 400 and 700 degreesC to study the effect of the crystallization kinetics on structure and microstructure of these materials. X-ray diffraction (XRD) technique was used to study the structure of the crystallized films. In the temperature range investigated, the lattice strain (c/a) presented a maximum value (c/a = 1.056) for film crystallized at 600 degreesC for I h. Atomic force microscopy (AFM) was used in investigation of the microstructure of the films. The rms roughness of the films linearly increases with temperature and ranged from 1.25 to 9.04 nm while the grain sizes ranged from 130.6 to 213.6 nm. Greater grain size was observed for film crystallized at 600 degreesC for 1 h. (C) 2002 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:223 / 227
页数:5
相关论文
共 13 条
[11]  
NEWNHAM RE, 1982, CHEM PROCESSING ADV, P379
[12]  
Pechini M.P, 1967, US Pat. Off., Patent No. [3330697, 3,330,697]
[13]   Solution deposition of ferroelectric thin films [J].
Tuttle, BA ;
Schwartz, RW .
MRS BULLETIN, 1996, 21 (06) :49-54