Towards a Monolithic, Substrate-Reusable and an All-Epitaxial Design for III-V-on-Si Solar Cells

被引：0

作者：

Jain, Nikhil ^{[1
]}

Clavel, Michael ^{[1
]}

Goley, Patrick ^{[1
]}

Hudait, Mantu ^{[1
]}

机构：

[1] Virginia Tech, Blacksburg, VA 24060 USA

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

III-V-on-Si; Ge-on-Si; heteroepitaxy; photovoltaic cells; solar cell design; GAAS; GE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Integration of III-V multijunction solar cells on Si substrate can address the future levelized cost of energy by unifying the high-efficiency merits of III-V materials with the low-cost and abundance of Si. A Si-compatible monolithically integrated 3J InGaP/GaAs/Ge-Si cell design with a hybrid Ge-Si bottom cell is investigated. Utilizing a combination of comprehensive modeling and experimental material characterization techniques, we present our results for ultrathin epitaxial Ge directly grown on Si substrate using molecular beam epitaxy. Virtual "Ge-on-Si" substrates could provide a large-area, low-cost alternative to expensive GaAs wafers, a promising step towards realizing monolithic, high-efficiency and low-cost III-V-on-Si photovoltaics.

引用

收藏

页数：5

相关论文

共 12 条

[1] Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates [J].

Andre, CL ;

Carlin, JA ;

Boeckl, JJ ;

Wilt, DM ;

Smith, MA ;

Pitera, AJ ;

Lee, ML ;

Fitzgerald, EA ;

Ringel, SA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) :1055-1060

[2]

Bett A. W., 2013, 28 EUR PHOT C

[3] Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding [J].

Derendorf, Karen ;

Essig, Stephanie ;

Oliva, Eduard ;

Klinger, Vera ;

Roesener, Tobias ;

Philipps, Simon P. ;

Benick, Jan ;

Hermle, Martin ;

Schachtner, Michael ;

Siefer, Gerald ;

Jaeger, Wolfgang ;

Dimroth, Frank .

IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (04) :1423-1428

[4]

Diaz M., 2014, 40 IEEE PHOT SPEC C, P0827

[5] III-V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook [J].

Jain, Nikhil ;

Hudait, Mantu K. .

Energy Harvesting and Systems, 2014, 1 (03) :121-145

[6]

Jain N., 2014, 40th IEEE Photovoltaic Spec Conf., Denver, CO, USA, P1152

[7] Design and Modeling of Metamorphic Dual-Junction InGaP/GaAs Solar Cells on Si Substrate for Concentrated Photovoltaic Application [J].

Jain, Nikhil ;

Hudait, Mantu K. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (06) :1683-1689

[8] Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis [J].

Jain, Nikhil ;

Hudait, Mantu K. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01) :528-534

[9] Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy [J].

Li, QM ;

Han, SM ;

Brueck, SRJ ;

Hersee, S ;

Jiang, YB ;

Xu, HF .

APPLIED PHYSICS LETTERS, 2003, 83 (24) :5032-5034

[10] High-quality Ge epilayers on Si with low threading-dislocation densities [J].

Luan, HC ;

Lim, DR ;

Lee, KK ;

Chen, KM ;

Sandland, JG ;

Wada, K ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 1999, 75 (19) :2909-2911