Fused InGaAs-Si avalanche photodiodes with low-noise performances

被引：62

作者：

Kang, Y ^{[1
]}

Mages, P

Clawson, AR

Yu, PKL

Bitter, M

Pan, Z

Pauchard, A

Hummel, S

Lo, YH

机构：

[1] Univ Calif San Diego, Jacobs Sch Engn, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Nova Crystals Inc, San Jose, CA 95126 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 11期

关键词：

avalanche photodiode (APD); noise; optical communication; photodetectors; wafer bonding;

D O I：

10.1109/LPT.2002.803370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fused InGaAs-Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is reported. This corresponds to a k factor of 0.02 for the silicon avalanche region. Dark current density as low as 0.04 mA/cm(2) at -5 V and 0.6 mA/cm(2) at again of 10 are measured; a small thermal coefficient, 0.09%/degreesC, of the breakdown voltage is observed for this APD.

引用

页码：1593 / 1595

页数：3

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