Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient

被引：25

作者：

Jang, Kyungsoo ^{[1
]}

Lee, Kwangsoo ^{[1
]}

Kim, Junsik ^{[1
]}

Hwang, Sunghyun ^{[1
]}

Lee, Jeongin ^{[1
]}

Dhungel, Suresh Kumar ^{[1
]}

Jung, Sungwook ^{[1
]}

Yi, Junsin ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 06期

关键词：

aluminium nitride; sputtering; RTA; FTIR; XRD; negative V-FB;

D O I：

10.1016/j.mssp.2006.10.052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminium nitride (AlN) thin films were deposited by radio frequency (RF) magnetron sputtering on p-type silicon (Si) substrate of (100) orientation using only argon (Ar) gas at substrate temperature of 300 degrees C. In order to achieve improved electrical properties, we performed post-deposition rapid thermal annealing (RTA). Sputtered AlN films were annealed in an oxygen ambient at temperatures of 600, 700, and 800 degrees C using RTA for 30 min. The orientation of the AlN crystal in the film was investigated using X-ray diffraction (XRD). The characteristic spectra by functional group were analyzed by Fourier transformation infrared (FTIR) spectroscopy. The electrical properties of the AIN thin films were studied through capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor (MIS) device using the films as insulating layers. The flatband voltages (VFB) in C-V curves were found to depend on crystal orientations. Negative VFB was found in the case when AlN (10 0) peak was found. Also, when AlN (103) peak was observed upon increasing the annealing temperature.. the value of VFB was positive and after annealing at 700 degrees C, AlN (103) peak intensity was found to be maximum and VFB was as high as + 6.5 V. (c) 2006 Published by Elsevier Ltd.

引用

页码：1137 / 1141

页数：5

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