Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

被引：5

作者：

Ma, H. C. ^{[1
]}

Chou, Y. L. ^{[1
]}

Chiu, J. P. ^{[1
]}

Wang, Tahui ^{[1
,2
]}

Ku, S. H. ^{[2
]}

Zou, N. K. ^{[2
]}

Chen, Vincent ^{[2
]}

Lu, W. P. ^{[2
]}

Chen, K. C. ^{[2
]}

Lu, Chih-Yuan ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Macronix Int Co Ltd, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 11期

关键词：

Percolation; program charge; random telegraph noise (RTN); SONOS;

D O I：

10.1109/LED.2009.2030589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current level. A 3-D atomistic simulation is performed to calculate RTN amplitudes. Our result shows that the wide spread of program-state RTN amplitudes in a SONOS cell is attributed to a current-path-percolation effect caused by random discrete nitride charges.

引用

页码：1188 / 1190

页数：3

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