Large memory window in the vanadium doped Bi4Ti3O12 thin films

We report the enhancement of ferroelectric properties in vanadium-doped Bi4Ti3O12 (BIT) thin films prepared by rf magnetron sputtering method for MFM and MFIS structures. The optimal sputtering parameters of the as-deposited Bi3.9Ti2.9V0.08O12 (BTV) ferroelectric films for different depositing times were obtained. Compared to the undoped BIT, vanadium doped BIT (BTV) showed better physical and electrical characteristics. The as-deposited BTV showed a remanent polarization (2P (r) ) of 23 mu C/cm(2), higher than the value of 16 mu C/cm(2) for BIT, as the measured frequency was 100 kHz. For BTV thin films in the MFIS structure, the leakage current density and the memory window decreased, the change ratio of capacitance critically increased as the depositing time increased from 30 to 120 min. Regarding the measured physical properties, the micro-structure and thickness of as-deposited undoped and vanadium doped BIT thin films were obtained and compared by XRD patterns and SEM images.