Techniques to study the reliability of metal RF MEMS capacitive switches.

被引：44
作者：
De Wolf, I
van Spengen, WM
机构：
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, EE Dept, Louvain, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期
关键词：
D O I：
10.1016/S0026-2714(02)00232-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the relevant failure modes of capacitive RF MEMS devices are discussed, as are the techniques to study them. Covered are topics like dielectric charging, creep and stiction. The techniques discussed include scanning electron microscopy (SEM), atomic force microscopy (AFM), interferometric optical inspection and electrical lifetime testing. (C) 2002 Published by Elsevier Science Ltd.
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收藏
页码：1789 / 1794
页数：6
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