Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

被引：39

作者：

Shih, Shih-En ^{[1
]}

Deal, William R. ^{[1
]}

Yamauchi, Derrick M. ^{[1
]}

Sutton, William E. ^{[1
]}

Luo, Wen-Ben ^{[1
]}

Chen, Yaochung ^{[1
]}

Smorchkova, Ioulia P. ^{[1
]}

Heying, Benjamin ^{[1
]}

Wojtowicz, Michael ^{[1
]}

Siddiqui, Mansoor ^{[1
]}

机构：

[1] Northrop Grumman Aerosp Syst, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2009年 / 57卷 / 12期

关键词：

Broadband amplifier; dual-gate; GaN; high electron mobility transistor (HEMT); low-noise amplifier (LNA);

D O I：

10.1109/TMTT.2009.2034416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present three ultra wide bandwidth low-noise amplifiers (LNAs) using dual-gate AlGaN/GaN HEMT devices. The single-stage, resistive feedback amplifiers target two different frequency bands: two LNAs operate in 0.3-4 GHz and one LNA is in 1.2-18 GHz. All three LNAs are capable of better than 13: 1 bandwidth. The first low frequency amplifier uses a microstrip design and achieves 17.7 dB flat gain between 300 MHz-3 GHz, and 1.2 dB minimum noise figure around 1.3 GHz. The second 0.3-4 GHz LNA uses coplanar waveguide transmission lines and demonstrates 18 dB flat gain and 1.5 dB noise figure between 2 and 5 GHz. The high frequency microstrip-type LNA shows an average of 13 dB gain and between 2-3 dB noise figure across the band. The robust LNAs can be operated under various bias voltages while similar gain and noise figure performance are maintained.

引用

页码：3270 / 3277

页数：8

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