The effects of grinding on the structure of a low-defect kaolinite

被引:0
|
作者
Reynolds, RC [1 ]
Bish, DL
机构
[1] Dartmouth Coll, Hanover, NH 03755 USA
[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
关键词
D O I
暂无
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
Numerous studies have demonstrated the presence of at least two distinct kaolinites in individual kaolinite samples, one a low-defect material and the other a moderate- to high-defect material. Other studies have shown that some kaolinites contain the lowest-defect material in the coarsest size fractions whereas others contain the lowest-defect kaolinite in the finest fractions. In an attempt to clarify possible mechanisms for producing such kaolinite samples, we have used powder X-ray diffraction to study the effects of mechanical grinding on the nature of layer stacking in the >40 mum fraction of the American Petroleum Institute kaolinite standard no. 9 from Mesa Alta, New Mexico. This material is relatively rich in a low-defect kaolinite. Hand grinding for 10 min plus grinding under acetone for up to an additional 34 min in an automatic agate grinder produced significant changes in its diffraction pattern. However, further dry grinding in a ball mill for 10 min produced material that was almost totally disordered, based on measures such as the Hinkley index. The diffraction patterns of the wet-ground materials showed evidence of increasing disorder that could be modeled best as a physical mixture of low- and high-defect material, consistent with a physical mixture of the original ordered phase with varying amounts of a highly disordered material. Disorder in the high-defect kaolinite is caused by the interstratification of normal kaolinite layers with their enantiomorphs. Contrary to expectations, grinding of kaolinite does not produce a progressive increase in disorder for all of the crystallites present in a sample. Instead, grinding apparently creates increased amounts of a disordered kaolinite that coexist with relatively unaffected material. There is no evidence for the occurrence of an intermediate disordered phase. Contrary to previous reports, disorder caused by physical stress does not include random layer displacements of +/-b/3.
引用
收藏
页码:1626 / 1630
页数:5
相关论文
共 50 条
  • [21] A novel template-release method for low-defect nanoimprint lithography
    Kitagawa, Takuya
    Nakamura, Naoto
    Kawata, Hiroaki
    Hirai, Yoshihiko
    MICROELECTRONIC ENGINEERING, 2014, 123 : 65 - 72
  • [22] Growth of low-defect SiC and AlN crystals in refractory metal crucibles
    Helava, Heikki, I
    Mokhov, Evgeny N.
    Avdeev, Oleg A.
    Ramm, Mark G.
    Litvin, Dmitri P.
    Vasiliev, Alexander V.
    Roenkov, Alexander D.
    Nagalyuk, Sergey S.
    Makarov, Yuri N.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 85 - +
  • [23] Kinetics and dynamics of atomic-layer dissolution on low-defect Ag
    Wang, Yufei
    Garcia-Carrillo, Roberto
    Ren, Hang
    CHEMICAL SCIENCE, 2025, 16 (03) : 1447 - 1454
  • [24] MBE growth of low-defect Si layers highly doped with Sb
    Werner, J.
    Oehme, M.
    Kirfel, O.
    Lyutovich, K.
    Kasper, E.
    THIN SOLID FILMS, 2008, 517 (01) : 227 - 228
  • [25] Effects of dry grinding on the structural changes of kaolinite powders
    Sánchez-Soto, PJ
    de Haro, MDJ
    Pérez-Maqueda, LA
    Varona, I
    Pérez-Rodríguez, JL
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2000, 83 (07) : 1649 - 1657
  • [26] Polytype distributions in low-defect zeolite beta crystals synthesized without an organic structure-directing agent
    Sasaki, Yukichi
    Yoshida, Yoko
    Fisher, Craig A. J.
    Ikeda, Takuji
    Itabashi, Keiji
    Okubo, Tatsuya
    MICROPOROUS AND MESOPOROUS MATERIALS, 2016, 225 : 210 - 215
  • [27] Improving Material-Specific Dispense Processes for Low-Defect Coatings
    Smith, Brian
    Ramirez, Raul
    Braggin, Jennifer
    Wu, Aiwen
    Anderson, Karl
    Berron, John
    Brakensiek, Nick
    Washburn, Carlton
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
  • [28] DEFECT STRUCTURE FORMATION IN SILICON ON GRINDING
    BARTNITSKAYA, TS
    VLASOVA, MV
    ZELYAVSKII, VB
    KAKAZEI, NG
    KURDYUMOV, AV
    SUKHIKH, LL
    CHISTYAKOV, VI
    SOVIET POWDER METALLURGY AND METAL CERAMICS, 1992, 31 (11): : 903 - 907
  • [29] Edge-sensitive Semiconducting Behaviour in Low-defect Narrow Graphene Nanoribbons
    Kamikawa, Syota
    Shimizu, Taisei
    Yagi, Yuko
    Haruyama, Junji
    NANOMATERIALS AND NANOTECHNOLOGY, 2014, 4
  • [30] Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography
    Randive, Rajul V.
    Ma, Andy
    Kearney, Patrick A.
    Krick, David
    Reiss, Ira
    Mirkarimi, Paul B.
    Spiller, Eberhard
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2006, 5 (02):