A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling

被引：26

作者：

Lim, KY ^{[1
]}

Zhou, X ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 06期

关键词：

compact I-Vmodeling; deep-submicron MOSFET; LDD; series resistance;

D O I：

10.1109/16.842978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physically-based series resistance model for deep-submicron MOSFET is presented, which includes a bias-dependent (intrinsic) component and a bias-independent (extrinsic) component. The model is semi-empirical and consists of two physics-based fitting parameters to be extracted with a single measurement, which can be extended to all gate-length and bias conditions. The model can be applied to drain-current prediction and optimization due to process fluctuations such as LDD junction depth and spacer thickness.

引用

页码：1300 / 1302

页数：3

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