Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes

被引：86

作者：

Kuo, Yen-Kuang ^{[1
]}

Chang, Jih-Yuan ^{[2
]}

Chen, Fang-Ming ^{[3
]}

Shih, Ya-Hsuan ^{[4
]}

Chang, Hui-Tzu ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan

[3] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[4] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2016年 / 52卷 / 04期

关键词：

Light-emitting diodes; quantum wells; polarization; POLARIZATION; MODEL; ELECTROABSORPTION; FIELD;

D O I：

10.1109/JQE.2016.2535252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p-electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

引用

页数：5

共 22 条

[1] Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J].

Chichibu, SF ;

Abare, AC ;

Minsky, MS ;

Keller, S ;

Fleischer, SB ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

Coldren, LA ;

DenBaars, SP ;

Sota, T .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2006-2008

[2] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[3] A band-structure model of strained quantum-well wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) :252-263

[4] Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures [J].

Fiorentini, V ;

Bernardini, F ;

Ambacher, O .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1204-1206

[5] Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels [J].

Fischer, AJ ;

Allerman, AA ;

Crawford, MH ;

Bogart, KHA ;

Lee, SR ;

Kaplar, RJ ;

Chow, WW ;

Kurtz, SR ;

Fullmer, KW ;

Figiel, JJ .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3394-3396

[6] Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells [J].

Fujioka, Akira ;

Misaki, Takao ;

Murayama, Takashi ;

Narukawa, Yukio ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2010, 3 (04)

[7]

Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503

[8] High Output Power from 260nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance [J].

Grandusky, James R. ;

Gibb, Shawn R. ;

Mendrick, Mark C. ;

Moe, Craig ;

Wraback, Michael ;

Schowalter, Leo J. .

APPLIED PHYSICS EXPRESS, 2011, 4 (08)

[9] AlxGa1-xN/GaN band offsets determined by deep-level emission [J].

Hang, DR ;

Chen, CH ;

Chen, YF ;

Jiang, HX ;

Lin, JY .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) :1887-1890

[10]

Hirayama H., 2010, APPL PHYS EXPRESS, V3

← 1 2 3 →