Magnesium adsorption and incorporation in InN (0001) and (0 0 0 (1)over-bar) surfaces: A first-principles study

被引:3
|
作者
Belabbes, A. [1 ]
Kioseoglou, J. [1 ]
Komninou, Ph. [1 ]
Evangelakis, G. A. [2 ]
Ferhat, M. [3 ]
Karakostas, Th. [1 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece
[2] Univ Ioannina, Dept Phys, GR-45110 Ioannina, Greece
[3] USTO, Dept Phys, Oran 31000, Algeria
关键词
Doping InN; Mg; Semiconductor surfaces; FUNDAMENTAL-BAND GAP; MG-DOPED INN; POLAR; DIFFUSION; GAN(0001); NONPOLAR; DENSITY; ENERGY; MODEL;
D O I
10.1016/j.apsusc.2009.05.164
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present. first-principles results obtained within the framework of density functional theory referring to Mg adsorption and its incorporation in two distinct InN surfaces ((0 0 0 1), (0 0 0 (1) over bar)) under various adsorption coverage conditions. In all deposition cases we deducted the bonding characteristics and the electronic character of the structures. It is found that in In rich conditions N-polarity facilitates the diffusion of In and Mg adatoms while In-polarity facilitated the Mg-induced weakening of adatom (In, Mg)-surface interactions for small doses of Mg. This implies that the Mg dopant decreases In and Mg diffusion barrier leading to smoother surfaces. Interestingly, we found significant differences of Mg incorporation in In-and N-polar surfaces: Mg incorporation is easier in bare N-polar than in the In-polar surface, except when an In contracted bilayer is formed on top of the InN. In the case of In-polarity, Mg impurities start to penetrate in the subsurface region as the Mg coverage increases. In the contracted In bilayer case, Mg incorporation in the InN is significantly enhanced. Furthermore, we found that the presence of Mg close to the (0 0 0 (1) over bar) InN surface does not alter significantly the local structure, contrary to the In-polarity case in which a flattening of the bilayers is observed at the highest Mg coverage that may lead to the formation of basal inversion domain boundaries. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:8475 / 8482
页数:8
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