Influence of thermal cycling on TLFs observed in epitaxial NbN/MgO/NbN tunnel junctions

被引：4

作者：

Hamasaki, K

Ishida, H

Kawakami, A

Saito, A

Wang, Z

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

[2] KARC Commun Res Lab, Nishi Ku, Kobe, Hyogo 6512401, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 372卷 / PART 1期

关键词：

NbN/MgO/NbN epitaxial junction; 1/f noise; two-level fluctuations; thermal cycling;

D O I：

10.1016/S0921-4534(02)00693-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of thermal cycling on two-level fluctuations observed in NbN/MgO/NbN tunnel junctions epitaxially grown on single crystal MgO substrates. The measured voltage noise power spectral density S-V (f) had a Lorentzian frequency dependence as expected from the Machlup formula. The bias-voltage dependence of the Lorentzian corner frequency was well explained with the thermal activation model. We found that the fS(V) (f) in the epitaxial NbN/MgO/NbN junction did not change with time under the fixed bias-voltage at 4.2 K, but varied in amplitude periodically during thermal cycling between room and liquid-helium temperature. The results are discussed in terms of the stress developed in thin films during thermal cycling. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：18 / 21

页数：4

共 8 条

[1] Low-loss epitaxial NbN/MgO/NbN trilayers for THz applications [J].