Secondary Electron Contrast Modulation in SU-8 Photoresist Films Exposed Holographically

被引：0

作者：

Avila, L. F. ^{[1
]}

Gutierrez-Rivera, Luis ^{[1
]}

Cescato, Lucila ^{[1
]}

机构：

[1] Univ Estadual Campinas, Univ Campinas, Inst Phys Gleb Wataghin, Opt Lab, BR-13083970 Campinas, SP, Brazil

来源：

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS | 2010年 / 48卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

atomic force microscopy (AFM); cationic polymerization; holography; photoresists; scanning electron microscopy; FABRICATION; DIFFUSION; ACID; LITHOGRAPHY; ULTRATHICK; TOPOGRAPHY; KINETICS; RESIST; MEMS;

D O I：

10.1002/polb.21865

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

We report a Secondary Electron (SE) contrast modulation observed in scanning electron microscope photographs of the cross-section of SU-8 photoresist films exposed holographically. The modulation occurs along the whole depth of the sample and its contrast disappears when the samples are submitted to the post exposure bake (PEB). Diffraction and atomic force microscopy measurements of the samples were performed before and after PEB to investigate this modulation. The results indicate that this SE emission contrast modulation comes from the spatial chemical modulation generated by the photolysis during the exposure of the SU-8 films. (C) 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 226-230, 2010

引用

页码：226 / 230

页数：5

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