Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

被引：8
|
作者：
Liao, Y
Ye, F
Shao, QY
Chang, C
Wang, GZ
Fang, RC [1 ]
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China
来源：
THIN SOLID FILMS | 2000年 / 368卷 / 02期
关键词：
diamond films; porous silicon; hot-filament chemical vapor deposition;
D O I：
10.1016/S0040-6090(00)00767-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nucleation and growth process of diamond film on porous silicon in a hot-filament chemical vapor deposition system were investigated. The nucleation density of 3.6 x 10(7) cm(-2) was obtained. We find that almost all of the nuclei occur at the edge of the etched pores, and the continuous diamond films are successfully deposited without seeding diamond particles. The characters of diamond films were determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. No strains are found in diamond films, and no intermediates are found between the films and porous silicon substrates. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：211 / 215
页数：5
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